STMICROELECTRONICS STW4N150 Power MOSFET, N Channel, 4 A, 1.5 kV, 7 ohm, 10 V, 4 V Miller DS-10 padded interior dividers and five

padded interior dividers and five small ones can create up to eight sections inside the main compartment Elastic touch-fastened band inside main compartment secures larger lenses Tough 600D polyester exterior and 200D polyester interior lining Front

1 x 3/8" Threaded Mounting Knob

It has a minimum attenuation and low VSWR

This chart has been designed with that philosophy in mind and works equally well in engineering or production work

STMICROELECTRONICS STW4N150 Power MOSFET, N Channel, 4 A, 1.5 kV, 7 ohm, 10 V, 4 V Miller DS-10 padded interior dividers and fiveThe STW4N150 is a 1500V N channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate charge and switching characteristics. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements. 100% Avalanche tested Intrinsic capacitances and Qg minimized