STMICROELECTRONICS MJE2955T Bipolar (BJT) Single Transistor, PNP, 60 V, 2 MHz, 75 W, 10 A, 20 hFE Tiffen 45650ND18 Operating Temperature Min -55°C Operating

Operating Temperature Min -55°C Operating Temperature Max 105°C Lifetime @ Temperature 2000 hours @ 85°C Voltage Rating 16V AE Capacitor Case Radial Can - SMD Product Range WT Series Diameter 4mm Automotive Qualification Standard - ESR - Capacitance 10µF Packaging Cut Tape Ripple Current AC 18mA Height 5

This allows for precise adjustments and optimum viewing angles

236" Length - Imperial 16

The size of the beam can be modified by changing the opening between the flaps or the distance of the light source from the subject

STMICROELECTRONICS MJE2955T Bipolar (BJT) Single Transistor, PNP, 60 V, 2 MHz, 75 W, 10 A, 20 hFE Tiffen 45650ND18 Operating Temperature Min -55°C OperatingThe MJE2955T is a 60V Silicon Epitaxial Base PNP Power Transistor intended for power switching circuits and general purpose amplifiers. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. Complementary to the MJE3055T Well controlled hFE parameter for increased reliability Applications Industrial Product details Power Dissipation Pd 75W DC Collector Current 10A Collector Emitter Voltage V(br)ceo