VISHAY SIS407DN-T1-GE3 MOSFET Transistor, P Channel, -25 A, -20 V, 0.0082 ohm, -4.5 V, -400 mV General Brand 36-46 Internal 12-blade aperture diaphragm for

Internal 12-blade aperture diaphragm for smooth out-of-focus elements

7x Back Focus Optimal: 5

Balanced lines offer increased immunity to external electrical noise

litho-orthograhic

VISHAY SIS407DN-T1-GE3 MOSFET Transistor, P Channel, -25 A, -20 V, 0.0082 ohm, -4.5 V, -400 mV General Brand 36-46 Internal 12-blade aperture diaphragm forThis is a MOSFET Transistor, P Channel, 25 A, 20 V, 0. 0082 ohm, 4. 5 V, 400 mV product from VISHAY with the model number SIS407DN T1 GE3Product details Power Dissipation Pd 33W Operating Temperature Max 150C Continuous Drain Current Id 25A Transistor Polarity P Channel No. of Pins 8Pins Threshold Voltage Vgs 400mV Product Range Automotive Qualification Standard Drain Source Voltage Vds 20V Rds(on) Test Voltage Vgs 4. 5V Transistor Case Style PowerPAK